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IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

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IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

Name: IRFBC30 dual power mosfet Power Mosfet Transistor NCHANNEL 600V 18 ohm TO220 PowerMESHII MOSFET
Brand: Anterwell
Price: 1 USD

Brand Name : Anterwell

Model Number : IRFBC30

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8500pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Drain-source Voltage (VGS = 0) : 600 V

Gate-source Voltage : ± 20 V

Drain Current (pulsed) : 14 A

Peak Diode Recovery voltage slope : 3 V/ns

Storage Temperature : -65 to 150 ℃

Max. Operating Junction Temperature : 150 ℃

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IRFBC30

N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH^TM ΙΙ MOSFET

TYPE	V_DSS	R_DS(on)	I_D
IRFBC30	600 V	< 2.2 Ω	3.6 A

IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET TO-220

■ TYPICAL R_DS(on) = 1.8 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH^TM ΙΙ is the evolution of the first generation of MESH OVERLAY^TM . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600	V
V_DGR	Drain- gate Voltage (R_GS = 20 kΩ)	600	V
V_GS	Gate-source Voltage	± 20	V
I_D	Drain Current (continuous) at Tc = 25 ℃	3.6	A
I_D	Drain Current (continuous) at Tc = 100 ℃	2.3	A
I_DM (•)	Drain Current (pulsed)	14	A
P_tot	Total Dissipation at Tc = 25 ℃	75	W
	Derating Factor	0.6	W/℃
dv/dt(1)	Peak Diode Recovery voltage slope	3	V/ns
Tstg	Storage Temperature	-65 to 150	℃
Tj	Max. Operating Junction Temperature	150	℃

(•) Pulse width limited by safe operating area

( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

INTERNAL SCHEMATIC DIAGRAM

IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

TO-220 MECHANICAL DATA

IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

Product Tags:

npn smd transistor

multi emitter transistor

Quality IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET for sale

IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET Images

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